sd 0 dim. a b c d e f g h j k l m n q milimeter min. max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 inches min. max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 dimensions to-220ac SD2001 sd2002 sd2004 sd2008 sd2010 sd2012 sd2016 100 200 400 800 1000 1200 1600 100 200 400 800 1000 1200 1600 sirectifier v rsm v v rrm v a=anode, c=cathode, tab=cathode c a c(tab) c a discrete diodes symbol test conditions maximum ratings unit t vj =45 o c; t=10ms (50hz), sine v r =0v; t=8.3ms (60hz), sine t vj =150 o c; t=10ms(50hz), sine v r =0v; t=8.3ms(60hz), sine 250 275 225 270 a i fsm t vj =45 o c; t=10ms (50hz), sine v r =0v; t=8.3ms (60hz), sine t vj =150 o c; t=10ms(50hz), sine v r =0v; t=8.3ms(60hz), sine 330 360 300 320 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c weight 2 m d mounting torque 0.4...0.6 nm g i f(av)m t c =95 o c; 180 o sine 20 a symbol test conditions characteristic values unit r t t vj =t vjm 13 r thjc dc current 1.25 k/w m i r t vj =t vjm ; v r =v rrm < 1 ma v f i f =30a; t vj =25 o c < 1.25 v v to for power-loss calculations only 0.85 v _ _ c(tab) p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sd 0 discrete diodes 0.001 0.01 0.1 1 0 50 100 150 200 250 2 3 4 5 6 7 8 9 1 10 10 2 10 3 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 0 10 20 30 0 20 40 60 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i 2 t i fsm i f a v f t s t ms p tot w i d(av)m a t amb t s k/w a 2 s 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 i f(av)m t c a v a c c t vj = 45c 50hz, 80% v rrm v r = 0 v fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current and ambient temperature, sine 180 fig. 5 max. forward current versus case temperature fig. 6 transient thermal impedance junction to case r thha : 1 k/w 2 k/w 3 k/w 5 k/w 7 k/w 10 k/w 15 k/w t vj = 150c t vj =150c t vj = 25c t vj = 150c z thjc t vj = 45c constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 0.001 0.01 0.1 1 0 50 100 150 200 250 2 3 4 5 6 7 8 9 1 10 10 2 10 3 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 0 10 20 30 0 20 40 60 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i 2 t i fsm i f a v f t s t ms p tot w i d(av)m a t amb t s k/w a 2 s 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 i f(av)m t c a v a c c t vj = 45c 50hz, 80% v rrm v r = 0 v fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current and ambient temperature, sine 180 fig. 5 max. forward current versus case temperature fig. 6 transient thermal impedance junction to case r thha : 1 k/w 2 k/w 3 k/w 5 k/w 7 k/w 10 k/w 15 k/w t vj = 150c t vj =150c t vj = 25c t vj = 150c z thjc t vj = 45c constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
|
